Sanakirja
Tekoälykääntäjä
Kuvat
3
| Kieli | Käännökset |
|---|---|
| saksa | Molekularstrahlepitaxie |
Määritelmät
Substantiivi
- A technique, used in the production of thin films of ultra-pure semiconductors, that grows the film by condensation of evaporated atoms.
Luokat
A technique, used in the production of thin films of ultra-pure semiconductors, that grows the film by condensation of evaporated atoms.
A simple sketch showing the layout of the main chamber in a molecular-beam epitaxy system
A technique, used in the production of thin films of ultra-pure semiconductors, that grows the film by condensation of evaporated atoms.
One-atom-thick islands of silver deposited on the (111) surface of palladium by thermal evaporation. The substrate, even though it received a mirror polish and vacuum annealing, appears as a series of terraces. Calibration of the coverage was achieved by tracking the time needed to complete a full monolayer using tunneling microscopy (STM) and from the emergence of quantum-well states characteristic of the silver film thickness in photoemission spectroscopy (ARPES). Image size is 250 nm by 250 nm.
A technique, used in the production of thin films of ultra-pure semiconductors, that grows the film by condensation of evaporated atoms.
Molecular beam epitaxy system Veeco Gen II at the FZU – Institute of Physics of the Czech Academy of Sciences. The system is designed for growth of monocrystalline semiconductors, semiconducting heterostructures, materials for spintronics and other compound material systems containing Al, Ga, As, P, Mn, Cu, Si and C.